Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXA4IF1200TC-TUB

Banner
productimage

IXA4IF1200TC-TUB

IGBT PT 1200V 9A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXA4IF1200TC-TUB is a Power Transistor IGBT featuring a 1200V collector-emitter breakdown voltage and a continuous collector current of 9A. This device, packaged in a TO-268AA (TO-268-3, D3PAK) surface mount configuration, offers a maximum power dissipation of 45W. Key performance parameters include a gate charge of 12 nC, a typical on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 3A collector current (tested at 600V, 3A, 330 Ohm, 15V), and switching energy figures of 400µJ (on) and 300µJ (off). The IXYS PT IGBT technology is suitable for applications in industrial power supplies, motor drives, and renewable energy systems, operating within a temperature range of -40°C to 150°C. This component is supplied in a tube package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)350 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 3A
Supplier Device PackageTO-268AA
IGBT TypePT
Td (on/off) @ 25°C-
Switching Energy400µJ (on), 300µJ (off)
Test Condition600V, 3A, 330Ohm, 15V
Gate Charge12 nC
Current - Collector (Ic) (Max)9 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max45 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXA20I1200PZ-TUB

DISC IGBT XPT-GENX3 TO-263D2

product image
IXYK140N90C3

IGBT 900V 310A 1630W TO264

product image
IXLF19N250A

IGBT 2500V 32A 250W I4PAC