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IXA4IF1200TC-TRL

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IXA4IF1200TC-TRL

IGBT 1200V 9A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXA4IF1200TC-TRL is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This component features a 1200V collector-emitter breakdown voltage and a 9A continuous collector current (Ic), housed in a TO-268AA surface mount package. With a maximum power dissipation of 45W, it is suitable for robust operation within a -40°C to 150°C junction temperature range. The IXA4IF1200TC-TRL offers a typical on-state voltage (Vce(on)) of 2.1V at 15V gate-source voltage and 3A collector current, with a gate charge of 12 nC. This device is commonly utilized in industrial power supplies, motor control, and renewable energy systems. The component is provided in Tape & Reel packaging for automated assembly processes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 3A
Supplier Device PackageTO-268AA
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge12 nC
Current - Collector (Ic) (Max)9 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max45 W

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