IXA4I1200UC-TRL
IGBT 1200V 9A 45W TO252AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXA4I1200UC-TRL is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 9A, with a maximum power dissipation of 45W. It utilizes a standard input type and offers a low on-state voltage of 2.1V at 15V gate-emitter voltage and 3A collector current. Switching characteristics include on-state switching energy of 400µJ and off-state switching energy of 300µJ, tested at 600V, 3A, 330 Ohm, and 15V. The gate charge is 12nC. The IXA4I1200UC-TRL is packaged in a surface-mount TO-252AA (DPAK) configuration and supplied on a tape and reel for automated assembly. This component is suitable for use in power supplies, inverters, and motor control systems within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 3A |
| Supplier Device Package | TO-252AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 400µJ (on), 300µJ (off) |
| Test Condition | 600V, 3A, 330Ohm, 15V |
| Gate Charge | 12 nC |
| Current - Collector (Ic) (Max) | 9 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 45 W |
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