IXA37IF1200HJ
IGBT 1200V 58A 195W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXA37IF1200HJ is a high-performance Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) offering a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 58A at 25°C. This device features a low on-state voltage of 2.1V at 15V gate-emitter voltage and 35A collector current, with a maximum power dissipation of 195W. The IXA37IF1200HJ is designed for demanding applications requiring efficient power switching, exhibiting a typical gate charge of 106 nC. Switching characteristics include on-state switching energy of 3.8mJ and off-state switching energy of 4.1mJ, tested under conditions of 600V, 35A, 27 Ohms, and 15V. It operates within a temperature range of -40°C to 150°C (TJ). Packaged in the industry-standard TO-247-3 with the ISOPLUS247™ thermal management solution, this IGBT is suitable for power conversion, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 3.8mJ (on), 4.1mJ (off) |
| Test Condition | 600V, 35A, 27Ohm, 15V |
| Gate Charge | 106 nC |
| Current - Collector (Ic) (Max) | 58 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 195 W |
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