IXA20IF1200HB
IGBT 1200V 38A 165W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXA20IF1200HB is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current (Ic) of 38A, with a maximum power dissipation of 165W. The PT IGBT type offers a standard input and a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 15A collector current. Switching performance is characterized by a gate charge of 47 nC and switching energies of 1.55mJ (on) and 1.7mJ (off) under test conditions of 600V, 15A, 56 Ohm, and 15V. The IXA20IF1200HB is packaged in a TO-247-3 through-hole configuration and operates across a wide temperature range of -40°C to 150°C (TJ). This device is suitable for power factor correction circuits, inverters, and motor drives within industrial and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.55mJ (on), 1.7mJ (off) |
| Test Condition | 600V, 15A, 56Ohm, 15V |
| Gate Charge | 47 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 165 W |
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