IXA17IF1200HJ
IGBT 1200V 28A 100W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXA17IF1200HJ is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 28A at a maximum power dissipation of 100W. The IXA17IF1200HJ utilizes the ISOPLUS247™ package, a TO-247-3 through-hole mounting solution, ensuring robust thermal performance and ease of integration. Key electrical characteristics include a typical Vce(on) of 2.1V at 15V gate-source voltage and 15A collector current, along with a gate charge of 47 nC. Switching performance is specified with a switching energy of 1.55mJ (on) and 1.7mJ (off) under test conditions of 600V, 15A, and 56 Ohms. This device is suitable for power factor correction, induction heating, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.55mJ (on), 1.7mJ (off) |
| Test Condition | 600V, 15A, 56Ohm, 15V |
| Gate Charge | 47 nC |
| Current - Collector (Ic) (Max) | 28 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 100 W |
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