IXA12IF1200TC-TUB
IGBT PT 1200V 20A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXA12IF1200TC-TUB is a Trench Field-Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 20 A. With a maximum power dissipation of 85 W and a Vce(on) of 2.1V at 10A and 15V gate drive, it offers efficient switching. The device is packaged in a surface-mount TO-268AA (TO-268-3, D3PAK) for thermal management. Key switching characteristics include a gate charge of 27 nC, switching energy of 1.1mJ (on) and 1.1mJ (off) under test conditions of 600V, 10A, 100 Ohm, and 15V, and a reverse recovery time of 350 ns. The operating temperature range is -40°C to 150°C (TJ). This IGBT is suitable for use in power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 37 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.1mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 10A, 100Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 85 W |
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