IXA12IF1200PB
IGBT PT 1200V 20A TO220-3Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXA12IF1200PB is a 1200V, 20A Insulated Gate Bipolar Transistor (IGBT) featuring a Positive Temperature Coefficient (PT) characteristic. This through-hole component, housed in a TO-220-3 package, offers a maximum collector current of 20A and a maximum power dissipation of 85W. Key specifications include a Vce(on) of 2.1V at 15V gate-emitter voltage and 10A collector current, with a gate charge of 27 nC. The switching energy is rated at 1.1mJ for both turn-on and turn-off under test conditions of 600V, 10A, 100 Ohms, and 15V. Operating temperature ranges from -40°C to 150°C. This component is suitable for applications in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 350 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 1.1mJ (on), 1.1mJ (off) |
| Test Condition | 600V, 10A, 100Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 85 W |
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