VMO650-01F
MOSFET N-CH 100V 690A Y3-DCBManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number VMO650-01F, offers a 100V drain-source voltage and a continuous drain current of 690A at 25°C (Tc). This chassis mount device features a low on-resistance of 1.8mOhm maximum at 500mA and 10V. With a maximum power dissipation of 2500W (Tc), it is suitable for high-power applications. Key parameters include a gate charge of 2300 nC at 10V and input capacitance of 59000 pF at 25V. The VMO650-01F is designed for demanding applications in industrial power supplies, motor control, and renewable energy systems. It operates within a temperature range of -40°C to 150°C (TJ) and utilizes the Y3-DCB package.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Y3-DCB |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 690A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2500W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 130mA |
| Supplier Device Package | Y3-DCB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 59000 pF @ 25 V |
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