VMO60-05F
MOSFET N-CH 500V 60A TO240AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, VMO60-05F. This device features a 500V drain-source voltage rating and a continuous drain current of 60A at 25°C (Tc). The VMO60-05F offers a maximum on-resistance of 75mOhm at 500mA and 10V gate-source voltage. With a high continuous drain current capability and 590W power dissipation, this MOSFET is suited for demanding applications. Key parameters include a gate charge of 405nC at 10V and input capacitance of 12600pF at 25V. The component is housed in a TO-240AA package for chassis mounting and operates over a temperature range of -40°C to 150°C. This device finds application in power conversion, motor control, and industrial power supplies.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-240AA |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 590W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 24mA |
| Supplier Device Package | TO-240AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 405 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12600 pF @ 25 V |
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