VMO580-02F
MOSFET N-CH 200V 580A Y3-LIManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS HiPerFET™ VMO580-02F is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 580 A at 25°C (Tc). With a low On-Resistance (Rds On) of 3.8 mOhm at 430 A and 10 V, it minimizes conduction losses. The VMO580-02F utilizes MOSFET technology and is housed in a Y3-Li package for chassis mounting, facilitating efficient thermal management. Key parameters include a Gate Charge (Qg) of 2750 nC at 10 V. This device operates across a temperature range of -40°C to 150°C (TJ). It is suitable for industries such as industrial power supplies and high-power motor control.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Y3-Li |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 580A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 430A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 50mA |
| Supplier Device Package | Y3-Li |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 2750 nC @ 10 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
