VMO550-01F
MOSFET N-CH 100V 590A Y3-DCBManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™ N-Channel MOSFET, part number VMO550-01F. This chassis mount device offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 590A at 25°C (Tc), with a maximum power dissipation of 2200W (Tc). Key parameters include a low on-resistance (Rds On) of 2.1mOhm at 500mA and 10V, and a gate charge (Qg) of 2000nC at 10V. The input capacitance (Ciss) is a maximum of 50000pF at 25V. The VMO550-01F is housed in a Y3-DCB package and operates within a temperature range of -40°C to 150°C (TJ). This component is suitable for applications requiring high current handling and efficiency, such as industrial power supplies and motor control.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-DCB |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 590A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2200W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 110mA |
| Supplier Device Package | Y3-DCB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2000 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50000 pF @ 25 V |
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