VMO1600-02P
MOSFET N-CH 200V 1900A Y3-LIManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS VMO1600-02P from the PolarHT™ series is a high-performance N-Channel enhancement mode MOSFET. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 1900 A at 25°C (Tc). With a low on-resistance (Rds On) of 1.7 mOhm at 1600 A and 10 V gate drive, it is optimized for high-power applications. The gate charge (Qg) is specified at 2900 nC maximum at 10 V. This device utilizes Metal Oxide semiconductor technology and is designed for chassis mounting. Key parameters include a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 5V at 5mA. The operating temperature range is -40°C to 150°C (TJ). This MOSFET is suitable for demanding applications in industries such as industrial power supplies, electric vehicle powertrains, and renewable energy systems. The package type is Y3-Li.
Additional Information
Series: PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Y3-Li |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1900A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 1600A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | Y3-Li |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 2900 nC @ 10 V |
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