VMO150-01P1
MOSFET N-CH 100V 165A ECO-PAC2Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ VMO150-01P1 is a 100V N-Channel power MOSFET in an ECO-PAC2 package. This device offers a continuous drain current of 165A at 25°C case temperature and a maximum power dissipation of 400W at 25°C case temperature. Key electrical parameters include a low on-resistance of 8mOhm at 90A and 10V gate drive, with a gate charge (Qg) of 400 nC maximum at 10V. The input capacitance (Ciss) is specified at 9400 pF maximum at 25V. Designed for chassis mounting, this MOSFET operates across a temperature range of -40°C to 150°C. It is suitable for applications in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | ECO-PAC2 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 165A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ECO-PAC2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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