VMO1200-01F
MOSFET N-CH 100V 1220A Y3-LIManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ VMO1200-01F is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 1220A at 25°C (Tc). The low on-resistance (Rds On) of 1.35mOhm at 932A and 10V gate drive voltage, coupled with a maximum gate charge (Qg) of 2520 nC @ 10V, ensures efficient switching performance.
Engineered for demanding environments, the VMO1200-01F operates across a temperature range of -40°C to 150°C (TJ). Its robust Y3-Li chassis mount package facilitates effective thermal management. This MOSFET is suitable for use in industrial power supplies, electric vehicle charging, and high-power motor control systems, where reliable and high-efficiency power conversion is critical. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V @ 64mA.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Y3-Li |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1220A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 932A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 64mA |
| Supplier Device Package | Y3-Li |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2520 nC @ 10 V |
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