VM0550-2F
MOSFET N-CH 100V 590A MODULEManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ VM0550-2F is an N-Channel Power MOSFET module featuring a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 590A at 25°C (Tc). This chassis mount device offers a low on-resistance (Rds On) of 2.1mOhm at 500mA and 10V, with a maximum power dissipation of 2200W. Key electrical parameters include a maximum gate charge (Qg) of 2000 nC at 10V and input capacitance (Ciss) of 50000 pF at 25V and 25V respectively. This component is widely utilized in high-power switching applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The VM0550-2F is supplied in bulk packaging.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 590A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2200W |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Module |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2000 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50000 pF @ 25 V |
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