MXB12R600DPHFC
MOSFET N-CH 600V 15AManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS MXB12R600DPHFC is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 13A at 25°C (Tc), this component offers robust power handling capabilities. The MOSFET utilizes advanced Metal Oxide technology within the ISOPLUS i4-PAC™ package, facilitating efficient thermal management for through-hole mounting. This device is suitable for power conversion systems, industrial motor drives, and high-voltage power supplies where reliability and performance are critical. The ISOPLUS i4-PAC™ packaging provides a compact and effective solution for heat dissipation in high-power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 33 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
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