MMIX1T660N04T4
MOSFET N-CH 40V 660A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS MMIX1T660N04T4 is an N-Channel Power MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 660A at 25°C, with a maximum power dissipation of 830W. The on-resistance (Rds On) is specified at a maximum of 0.85mOhm at 100A and 10V drive voltage. Key parameters include gate charge (Qg) of 860 nC at 10V and input capacitance (Ciss) of 44000 pF at 25V. Operating temperature ranges from -55°C to 175°C. The device utilizes MOSFET technology and is housed in a 24-SMPD package with 21 leads, suitable for surface mounting. This component is frequently utilized in high-current power switching, electric vehicle systems, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.85mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 860 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 44000 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
