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MMIX1T600N04T2

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MMIX1T600N04T2

MOSFET N-CH 40V 600A 24SMPD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS MMIX1T600N04T2 is an N-Channel FRFET®, SupreMOS® series MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 600A at 25°C (Tc), with a maximum power dissipation of 830W (Tc). The low on-resistance of 1.3mOhm at 100A and 10V drive voltage, coupled with a gate charge (Qg) of 590 nC at 10V, signifies efficient switching characteristics. With an input capacitance (Ciss) of 40000 pF at 25V and a maximum Vgs of ±20V, this device is suitable for demanding power conversion, motor control, and power distribution systems within the automotive and industrial sectors. The surface mount 24-SMPD package (24-PowerSMD, 21 Leads) is designed for robust thermal management. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: FRFET®, SupreMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case24-PowerSMD, 21 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C600A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)830W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package24-SMPD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds40000 pF @ 25 V

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