MMIX1T550N055T2
MOSFET N-CH 55V 550A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS MMIX1T550N055T2 is an N-Channel FRFET®, SupreMOS® series power MOSFET designed for high-power applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 550A at 25°C (Tc), with a maximum power dissipation of 830W (Tc). Its low on-resistance, specified as 1.3mOhm at 100A and 10V, is achieved through advanced trench technology. The MOSFET offers a gate charge (Qg) of 595 nC at 10V and an input capacitance (Ciss) of 40000 pF at 25V. With a maximum gate-source voltage (Vgs(max)) of ±20V and a threshold voltage (Vgs(th)) of 3.8V at 250µA, it provides robust gate control. The MMIX1T550N055T2 is housed in a 24-SMPD surface-mount package, suitable for demanding thermal management. This component finds application in high-current switching, power factor correction, and electric vehicle powertrains.
Additional Information
Series: FRFET®, SupreMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 550A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 595 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40000 pF @ 25 V |
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