MMIX1T132N50P3
MOSFET N-CH 500V 63A POLAR3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS Polar™ MMIX1T132N50P3 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 63A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). Its low on-resistance is 43mOhm at 66A and 10V (Vgs). The device is constructed using Metal Oxide technology and is supplied in the Polar3™ package, suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 267 nC at 10V (Vgs) and an input capacitance (Ciss) of 18600 pF at 25V (Vds). The operating temperature range is -55°C to 150°C (TJ). Applications for this MOSFET include power supplies, motor control, and lighting systems.
Additional Information
Series: Polar™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 49 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 22 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | Polar3™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18600 pF @ 25 V |
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