MMIX1F520N075T2
MOSFET N-CH 75V 500A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS MMIX1F520N075T2 is a high-performance N-Channel MOSFET from the GigaMOS™ TrenchT2™ series. This device features a 75V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 500A at 25°C (Tc). With a maximum power dissipation of 830W (Tc) and a typical Rds On of 1.6mOhm at 100A and 10V, it is engineered for demanding applications. The MOSFET utilizes a surface mount 24-SMPD package with 21 leads. Key electrical characteristics include a gate charge (Qg) of 545 nC at 10V and input capacitance (Ciss) of 41000 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-power switching applications across industries such as industrial automation, electric vehicle power conversion, and renewable energy systems.
Additional Information
Series: GigaMOS™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 545 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 41000 pF @ 25 V |
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