MMIX1F44N100Q3
MOSFET N-CH 1000V 30A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ MMIX1F44N100Q3 is an N-Channel Power MOSFET designed for demanding high-voltage applications. This component features a 1000V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 694W (Tc). The device exhibits a low on-resistance (Rds On) of 245mOhm at 22A and 10V gate drive. Key parameters include a gate charge (Qg) of 264 nC at 10V and input capacitance (Ciss) of 13600 pF at 25V. The MMIX1F44N100Q3 is housed in a 24-SMPD surface mount package, facilitating efficient thermal management. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 245mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 694W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 264 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
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