MMIX1F420N10T
MOSFET N-CH 100V 334A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS MMIX1F420N10T is an N-Channel Power MOSFET from the GigaMOS™, HiPerFET™, and TrenchT2™ series. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 334 A at 25°C (Tc), with a maximum power dissipation of 680 W (Tc). The device exhibits a low on-resistance (Rds On) of 2.6 mOhm at 60 A and 10 V, and its gate charge (Qg) is 670 nC maximum at 10 V. Input capacitance (Ciss) is rated at 4700 pF maximum at 10 V. The MMIX1F420N10T is housed in a 24-SMPD surface mount package, designed for operation between -55°C and 175°C (TJ). This component is suitable for applications in power supply, motor control, and industrial power switching.
Additional Information
Series: GigaMOS™, HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 334A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 680W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 670 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 10 V |
Request a Quote
Clients Also Buy
MMIX1F160N30T
MOSFET N-CH 300V 102A 24SMPD
MMIX1F180N25T
MOSFET N-CH 250V 132A 24SMPD
MMIX1F230N20T
MOSFET N-CH 200V 168A 24SMPD
