MMIX1F40N110P
MOSFET N-CH 1100V 24A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, PolarP2™ N-Channel Power MOSFET, MMIX1F40N110P, offers robust performance with a 1100 V drain-to-source voltage and 24 A continuous drain current at 25°C. This surface mount device, packaged in a 24-SMPD, provides a maximum power dissipation of 500 W at 25°C. Key parameters include a low Rds(on) of 290 mOhm at 20 A and 10 V, a gate charge of 310 nC at 10 V, and input capacitance (Ciss) of 19000 pF at 25 V. The device supports a gate-source voltage range of ±30 V and a threshold voltage (Vgs(th)) of 6.5 V at 1 mA. Operating within a temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications in power supply, motor drive, and industrial automation sectors.
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 310 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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