MMIX1F360N15T2
MOSFET N-CH 150V 235A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS MMIX1F360N15T2 is an N-Channel MOSFET from the GigaMOS™, TrenchT2™ series. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 235A at 25°C, with a maximum power dissipation of 680W. The Rds On is specified at a maximum of 4.4mOhm at 100A and 10V gate drive. Key parameters include Input Capacitance (Ciss) of 47500 pF at 25V and Gate Charge (Qg) of 715 nC at 10V. The MOSFET is housed in a 24-SMPD package for surface mounting and operates within a temperature range of -55°C to 175°C. This component is suitable for high-power switching applications across various industrial sectors.
Additional Information
Series: GigaMOS™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 235A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 680W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 715 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 47500 pF @ 25 V |
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