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MMIX1F210N30P3

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MMIX1F210N30P3

MOSFET N-CH 300V 108A 24SMPD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS HiPerFET™, Polar3™ N-Channel MOSFET, part number MMIX1F210N30P3, is a 300V device designed for high-power switching applications. It features a continuous drain current capability of 108A at 25°C (Tc) and a low on-resistance of 16mOhm at 105A and 10V gate-source voltage. The device offers an input capacitance (Ciss) of 16200 pF at 25V. Mounted in a 24-SMPD package, this MOSFET is suitable for demanding applications in industrial power supplies, electric vehicles, and renewable energy systems. Its robust construction and advanced technology ensure reliable performance in challenging environments.

Additional Information

Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case24-PowerSMD, 21 Leads
Mounting TypeSurface Mount
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C108A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 105A, 10V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id5V @ 8mA
Supplier Device Package24-SMPD
Drain to Source Voltage (Vdss)300 V
Input Capacitance (Ciss) (Max) @ Vds16200 pF @ 25 V

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