MMIX1F180N25T
MOSFET N-CH 250V 132A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS MMIX1F180N25T is a high-performance N-Channel MOSFET from the GigaMOS™, HiPerFET™, and TrenchT2™ series. This component features a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 132A at 25°C (Tc), with a maximum power dissipation of 570W (Tc). The low on-resistance is specified at 13mOhm at 90A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 364 nC (Max) at 10V and input capacitance (Ciss) of 23800 pF (Max) at 25V. Designed for surface mounting, it is housed in a 24-SMPD package with 21 leads. This device operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20V. Applications include power factor correction, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: GigaMOS™, HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 132A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 570W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 364 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23800 pF @ 25 V |
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