MMIX1F160N30T
MOSFET N-CH 300V 102A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS MMIX1F160N30T is an N-Channel TrenchT2™ MOSFET designed for high-power applications. This component features a 300V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 102A at 25°C (Tc), with a maximum power dissipation of 570W (Tc). The low on-resistance of 20mOhm at 60A and 10V gate-source voltage (Vgs) is achieved through its TrenchT2™ technology, contributing to efficient operation. Key parameters include a gate charge (Qg) of 335 nC at 10V Vgs and input capacitance (Ciss) of 2800 pF at 25V Vds. The MMIX1F160N30T is housed in a 24-SMPD package, a surface-mount design with 21 leads, suitable for demanding thermal management. Operating temperature range is -55°C to 150°C (TJ). This device finds application in power conversion, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: GigaMOS™, HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 570W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 335 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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