MMIX1F132N50P3
MOSFET N-CH 500V 63A 24SMPDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™, Polar3™ MMIX1F132N50P3 is an N-Channel power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 63 A at 25°C (Tc), this device offers a low on-resistance (Rds On) of 43 mOhm at 66 A and 10 V. With a maximum power dissipation of 520 W (Tc) and a gate charge (Qg) of 250 nC at 10 V, it is suitable for high-power switching. The input capacitance (Ciss) is 18600 pF at 25 V. This MOSFET is housed in a 24-SMPD package, a 24-PowerSMD, 21 leads surface mount configuration, and operates within a temperature range of -55°C to 150°C (TJ). Its robust construction and performance characteristics make it ideal for use in power supply units, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | 24-SMPD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18600 pF @ 25 V |
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