MKE11R600DCGFC
MOSFET N-CH 600V 15A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS CoolMOS™ N-Channel MOSFET, part number MKE11R600DCGFC, offers a 600V breakdown voltage and a continuous drain current of 15A (Tc). This device features a low on-resistance of 165mOhm at 12A and 10V Vgs, with a gate charge of 52 nC at 10V. Designed for efficient power switching, it utilizes N-Channel MOSFET technology and is housed in an ISOPLUS i4-PAC™ package for through-hole mounting. The input capacitance (Ciss) is rated at a maximum of 2000 pF at 100V. This component is suitable for applications in industrial power supplies and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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