MCB60I1200TZ-TUB
SICFET N-CH 1.2KV 90A TO268AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS MCB60I1200TZ-TUB is an N-Channel SiCFET with a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 90 A at 25°C (Tc). This device features a low on-resistance (Rds On) of 34 mOhm at 50 A and 20 V. Designed for high-temperature operation, it has a maximum junction temperature of 175°C. The component utilizes a TO-268AA (D3Pak-HV) surface mount package, facilitating robust thermal management. Key parameters include a gate charge (Qg) of 160 nC at 20 V and input capacitance (Ciss) of 2790 pF at 1000 V. This SiC MOSFET is suitable for demanding applications in power supply, motor drive, and industrial power conversion sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 87 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | TO-268AA (D3Pak-HV) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
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