MCB60I1200TZ
1200V 90A SIC POWER MOSFETManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS MCB60I1200TZ is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. This device features a 1200V drain-source voltage and a continuous drain current of 90A (Tc) @ 25°C, with a low on-resistance of 34mOhm @ 50A, 20V. The MOSFET is housed in a TO-268AA (D3Pak-HV) surface mount package, facilitating efficient thermal management. Key parameters include a gate charge (Qg) of 160 nC @ 20V and input capacitance (Ciss) of 2790 pF @ 1000V. The operating temperature range is -40°C to 175°C (TJ), supporting robust operation in challenging environments. This component is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | TO-268AA (D3Pak-HV) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
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