IXUN350N10
MOSFET N-CH 100V 350A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXUN350N10 is a high-power N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 350A at 25°C, with a maximum power dissipation of 830W. The low on-resistance (Rds On) of 2.5mOhm is achieved at 175A and a gate-source voltage (Vgs) of 10V. Key electrical parameters include a gate charge (Qg) of 640nC at 10V and input capacitance (Ciss) of 27000pF at 25V. The IXUN350N10 utilizes MOSFET technology and operates within a temperature range of -55°C to 150°C. It is packaged in a SOT-227B (miniBLOC) configuration, suitable for chassis mounting. This device is commonly employed in power conversion, motor control, and industrial power supply systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 175A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 3mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 640 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27000 pF @ 25 V |
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