IXUN280N10
MOSFET N-CH 100V 280A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXUN280N10 is an N-Channel Power MOSFET designed for high-power switching applications. This component features a Vdss rating of 100V and a continuous drain current (Id) capability of 280A at 25°C (Tc), with a maximum Rds(on) of 5mOhm at 140A and 10V gate drive. The device offers a low gate charge of 440 nC (max) at 10V and an input capacitance (Ciss) of 18000 pF (max) at 25V. With a maximum power dissipation of 770W (Tc), it is suitable for demanding thermal environments. The IXUN280N10 is housed in a SOT-227B (miniBLOC) package, facilitating chassis mounting for efficient heat management. This MOSFET is utilized in applications such as industrial motor drives, power supplies, and electric vehicle systems. The operating temperature range is -55°C to 150°C (TJ), and the maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 770W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 440 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18000 pF @ 25 V |
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