IXTZ550N055T2
MOSFET N-CH 55V 550A DE475Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTZ550N055T2 is an N-Channel Power MOSFET from the TrenchT2™ series. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 550A at 25°C. With a low on-resistance (Rds On) of 1mOhm at 100A and 10V, it offers high efficiency for demanding applications. The maximum power dissipation (Pd) is rated at 600W (Tc). This MOSFET utilizes advanced trench technology for enhanced performance and is supplied in the DE475 package for surface mounting. Key parameters include a gate charge (Qg) of 595 nC at 10V and input capacitance (Ciss) of 40000 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-power switching applications across various industries, including power supplies, electric vehicle powertrains, and industrial motor control.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 550A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DE475 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 595 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40000 pF @ 25 V |
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