IXTY8N70X2
MOSFET N-CHANNEL 700V 8A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTY8N70X2, an Ultra X2 series N-Channel Power MOSFET, offers a 700V drain-source voltage and 8A continuous drain current at 25°C. This surface-mount device in a TO-252AA package features a low Rds(on) of 500mOhm maximum at 500mA and 10V Vgs. With a gate charge of 12nC maximum at 10V and input capacitance of 800pF maximum at 10V, it is suitable for high-efficiency power conversion applications. The device supports a maximum gate-source voltage of ±30V and has a thermal resistance (RthJC) contributing to its 150W maximum power dissipation. Commonly utilized in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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