IXTY8N65X2
MOSFET N-CH 650V 8A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTY8N65X2 is a 650V N-Channel Power MOSFET from the Ultra X2 series, available in a TO-252AA package. This device offers a continuous drain current of 8A at 25°C (Tc) and a maximum power dissipation of 150W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 650V, a maximum on-resistance (Rds on) of 500mOhm at 4A and 10V drive, and a gate charge (Qg) of 12 nC at 10V. Input capacitance (Ciss) is rated at 800pF at 25V. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C. This component is suitable for various industrial power conversion applications.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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