IXTY5N50P
MOSFET N-CH 500V 4.8A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY5N50P is an N-Channel Power MOSFET from the PolarHV™ series, packaged in a TO-252AA (DPAK) surface-mount case. This device offers a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 4.8A at 25°C (Tc), with a maximum power dissipation of 89W (Tc). Key parameters include a low on-resistance (Rds On) of 1.4 Ohm at 2.4A and 10V (Vgs), and a gate charge (Qg) of 12.6 nC at 10V. Input capacitance (Ciss) is specified at 620 pF at 25V (Vds). This component is suitable for applications requiring high voltage switching, including power supplies, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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