IXTY55N075T
MOSFET N-CH 75V 55A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTY55N075T is a TrenchMV™ series N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 75V drain-source breakdown voltage and a continuous drain current capability of 55A at 25°C case temperature, with a maximum power dissipation of 130W (Tc). The low on-resistance of 19.5mOhm at 27.5A and 10V gate drive voltage, coupled with a low gate charge of 33nC (max) at 10V, makes it suitable for demanding power conversion tasks. The IXTY55N075T utilizes advanced trench technology for enhanced performance and is housed in a surface-mount TO-252AA package. This component is commonly found in industrial power supplies, electric vehicle charging systems, and solar inverters. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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