IXTY50N085T
MOSFET N-CH 85V 50A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS TrenchMV™ N-Channel Power MOSFET, part number IXTY50N085T, is an 85V device designed for high-efficiency power conversion. This surface-mount component, packaged in a TO-252AA (DPAK) outline, features a continuous drain current capability of 50A (Tc) and a maximum power dissipation of 130W (Tc). With a low on-resistance of 23mOhm at 25A and 10V Vgs, it minimizes conduction losses. Key electrical parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 1460 pF at 25V, facilitating efficient switching. This MOSFET is suitable for applications in industrial power supplies, motor control, and energy storage systems, operating across a temperature range of -55°C to 175°C.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
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