IXTY4N65X2
MOSFET N-CH 650V 4A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY4N65X2 is an N-Channel MOSFET from the Ultra X2 series. This component features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 4 A at 25°C (Tc). With a maximum power dissipation of 80 W (Tc), it is designed for efficient operation. Key parameters include a typical gate charge (Qg) of 8.3 nC at 10 V and an input capacitance (Ciss) of 455 pF at 25 V. The Rds On (Max) is 850 mOhm at 2 A and 10 V. This device is housed in a TO-252AA (DPAK) surface mount package, making it suitable for applications in power supplies, industrial motor control, and lighting. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 25 V |
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