IXTY4N60P
MOSFET N-CH 600V 4A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTY4N60P is a 600V N-Channel Power MOSFET from the PolarHV™ series. This surface-mount device, housed in a TO-252AA package, offers a continuous drain current of 4A (Tc) and a maximum power dissipation of 89W (Tc). Key electrical specifications include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 2 Ohms at 2A and 10V Vgs, and a gate charge (Qg) of 13 nC at 10V Vgs. Input capacitance (Ciss) is rated at a maximum of 635 pF at 25V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies and industrial automation.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF @ 25 V |
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