IXTY3N60P
MOSFET N-CH 600V 3A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY3N60P is a PolarHV™ N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-to-source voltage (Vds) of 600 V and a continuous drain current (Id) of 3 A at 25°C (Tc). With a maximum power dissipation of 70 W (Tc) and a low on-resistance (Rds On) of 2.9 O at 500 mA and 10 V, it offers efficient switching performance. The MOSFET is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for demanding thermal management. Key parameters include a gate charge (Qg) of 9.8 nC at 10 V and input capacitance (Ciss) of 411 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supplies, industrial equipment, and renewable energy systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 411 pF @ 25 V |
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