IXTY3N50P
MOSFET N-CH 500V 3.6A TO252AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY3N50P is an N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 3.6A at 25°C (Tc). With a maximum power dissipation of 70W (Tc), it is designed for surface mount applications in a TO-252AA package. The Rds On is specified at a maximum of 2 Ohms at 1.8A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 9.3 nC at 10V and input capacitance (Ciss) of 409 pF at 25V. This device operates within a temperature range of -55°C to 150°C (TJ). Applications for this MOSFET include power switching and control in various industrial and consumer electronics systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 409 pF @ 25 V |
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