IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY2R4N50P is an N-Channel Power MOSFET from the PolarHV™ series, designed for high voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.4 A at 25°C. With a maximum power dissipation of 55 W (Tc), it offers efficient operation. The Rds On is specified at a maximum of 3.75 Ohms at 500 mA and 10 V gate drive. Key parameters include a gate charge (Qg) of 6.1 nC at 10 V and input capacitance (Ciss) of 240 pF at 25 V. The device is packaged in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. The IXTY2R4N50P is utilized in sectors such as industrial power supplies and electric vehicle charging infrastructure. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.75Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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