IXTY2N60P
MOSFET N-CH 600V 2A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY2N60P is a N-Channel Power MOSFET from the Polar™ series, designed for demanding applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C (Tc). With a maximum power dissipation of 55W (Tc), it is suitable for surface-mount applications utilizing the TO-252AA package. Key electrical characteristics include a maximum Rds On of 5.1 Ohms at 1A and 10V, and a gate charge (Qg) of 7 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 240 pF at 25V. The IXTY2N60P operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly used in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: Polar™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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