IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY1R6N50P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.6A at 25°C, with a maximum power dissipation of 43W (Tc). The Rds(On) is specified at a maximum of 6.5 Ohms when driven at 10V with a drain current of 500mA. Key parameters include a gate charge (Qg) of 3.9 nC (max) at 10V and input capacitance (Ciss) of 140 pF (max) at 25V. The IXTY1R6N50P is surface-mount packaged in a TO-252AA (DPAK) configuration, operating from -55°C to 150°C. This device finds application in power conversion and switching circuits across various industries.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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