IXTY1R4N60P TRL
MOSFET N-CH 600V 1.4A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This IXYS IXTY1R4N60P-TRL is an N-Channel Power MOSFET from the Polar™ series, designed for high-voltage switching applications. It features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.4A at 25°C (Tc). With a maximum power dissipation of 50W (Tc), this device is suitable for surface mount installations in a TO-252AA package. The Rds On is specified at a maximum of 9 Ohms at 700mA and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 5.2 nC at 10V and input capacitance (Ciss) of 140 pF at 25V. This component is utilized in industrial, consumer electronics, and power supply applications. The device is supplied in tape and reel packaging.
Additional Information
Series: Polar™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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