IXTY1N80
MOSFET N-CH 800V 750MA TO252AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTY1N80 is an N-Channel Power MOSFET designed for high voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 750mA at 25°C. Featuring a low Rds(on) of 11 Ohms at 500mA and 10V Vgs, it is suitable for efficient switching. The device boasts a maximum power dissipation of 40W (Tc) and a gate charge of 8.5 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 220 pF at 25V. The IXTY1N80 utilizes Metal Oxide technology and is provided in a TO-252AA surface mount package. It is commonly found in power supply, lighting, and industrial control applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
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